Test system for semiconductor memory cell

Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor

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235153AC, G01R 3100, G01R 3126

Patent

active

040042227

ABSTRACT:
This invention accelerates the leakage current from certain nodes of memory cells in static semiconductor memory to an extent whereby defective memory cells, which would not be detected without a considerable waiting period elapsing, are readily quickly detected.

REFERENCES:
patent: 3560849 (1971-02-01), Ryan
patent: 3748579 (1973-07-01), Henry et al.
patent: 3795859 (1974-03-01), Benante et al.
patent: 3859595 (1975-01-01), Lang
Sah et al.; "Thermal and Optical..."; Solid State Electronics; vol. 13; June 1970; pp. 759-785.

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