Test structure for measuring effect of trench isolation on...

Details Test structure for measuring effect of trench isolation on... Test structure for measuring effect of trench isolation on...

2005-02-22

2005-02-22

McElheny, Jr., Donald E. (Department: 2857)

Data processing: measuring, calibrating, or testing

Testing system

Of circuit

C702S081000, C324S765010, C438S017000

Reexamination Certificate

active

06859748

ABSTRACT:
An apparatus for measuring effects of isolation processes (280) on an oxide layer (286) in a memory device (255) is described. In one embodiment, the apparatus comprises a structure (110) comprised of an array (110c) of memory devices (255). A testing unit (120) is coupled with the structure (110). The testing unit (120) is for performing various electrical tests on the array (110c) of memory devices (255). The testing unit (120) is also for providing data regarding each memory device (255) in the array (110c) of memory devices (255). An analyzer (120) is coupled with the structure (110) for analyzing results of the various electrical tests. This determines the condition of the oxide layer (286) of each memory device (255) in the array of memory devices (110c).

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