Test structure and method to characterize charge gain in a non-v

Details Test structure and method to characterize charge gain in a non-v Test structure and method to characterize charge gain in a non-v

1997-02-25

1998-06-09

Zarabian, A.

Static information storage and retrieval

Floating gate

Particular connection

3651851, G11C 1140

Patent

active

057645698

ABSTRACT:
Disclosed is a method and apparatus for charge gain characterization of non-volatile memory cells. The test structure of the present invention includes an array of non-volatile memory cells similar to that of the proposed product, but having the control gates of some or all of the cells of the array linked to form a common floating gate. In this way, charge leakage through any cell so linked will accrue in the common floating cell. Any such charge gain will be detectable through a variety of possible structures.

REFERENCES:
patent: 5357466 (1994-10-01), Hong
patent: 5428571 (1995-06-01), Atsumi

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