Etching a substrate: processes – Forming or treating material useful in a capacitor
Patent
1998-05-28
2000-08-08
Gulakowski, Randy
Etching a substrate: processes
Forming or treating material useful in a capacitor
438 51, 438 54, 216 2, H01G 900
Patent
active
060997443
ABSTRACT:
A fabrication technique for a test sample to characterize pyroelectric and erroelectric thin films for use in uncooled infrared focal plane arrays operated at a nominal 60 Hz. Most layers are patterned by a lift off technique, and those layers that are not lifted off are chemically etched or ion milled. The pyroelectric layer is thermally insulated from the substrate by a thick film layer of ZrO.sub.2. The pyroelectric layer is sandwiched between metal layers to form a capacitor. Direct measurement of the voltages between the capacitor plates, and of the temperature of these plates, results in a direct measurement of thin film temperature responsivity.
REFERENCES:
patent: 5453347 (1995-09-01), Bullington et al.
patent: 5644838 (1997-07-01), Beratan
patent: 5757000 (1998-05-01), Rogowski et al.
patent: 5891512 (1999-04-01), Kawata et al.
Advena Donna J.
Terrill Conrad W.
Ahmed Shamim
Bashore Alain L.
Gulakowski Randy
Holford John E.
Lee Milton W.
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