Test photomask, flare evaluation method, and flare...

Details Test photomask, flare evaluation method, and flare... Test photomask, flare evaluation method, and flare...

2006-01-17

2006-01-17

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S022000, C430S030000, C382S144000, C382S145000, C382S149000, C382S151000

Reexamination Certificate

active

06986973

ABSTRACT:
Through use of a line pattern which becomes a pattern under measurement and a zone pattern in a zonal shape which becomes a flare causing pattern forming a light transmission region which surrounds the line pattern and causes local flare to occur on the line pattern, the effect of the local flare due to the zone pattern on the line pattern is measured as a line width of the line pattern for evaluation. Further, this measurement value is used to compensate the effect of the local flare on each real pattern.

REFERENCES:
patent: 6233056 (2001-05-01), Naulleau et al.
patent: 2003/0068565 (2003-04-01), Ki et al.
patent: 2004/0021854 (2004-02-01), Hikima
patent: 2004/0196447 (2004-10-01), Watanabe
patent: 2001-124663 (2001-05-01), None
patent: 2001-272766 (2001-10-01), None
Patent Abstracts of Japan, Publication No. 2001272766 A, dated Oct. 5, 2001.
Bourov A., et al., “Impact of Flare on CD Variation for 248nm and 193nm Lithography Systems,” Proceedings of SPIE vol. 4346, Sep. 2001, pp. 1388-1393, XP-002322054.
La Fontaine, B., et al., “Analysis of Flare and its Impact on Low-k1KrF and ArF Lithography,” Proceedings of SPIE vol. 4691, Jul. 2002, pp. 44-56, XP-002322033.

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