Test method of an electrostatic breakdown of a semiconductor dev

Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

324158F, 324454, G01R 3126

Patent

active

049547720

ABSTRACT:
In a test method of an electrostatic breakdown of a semiconductor device in accordance with the present invention, a plurality of semiconductor devices are disposed at random on a member which has been electrostatically charged with a predetermined voltage, and the semiconductor devices are caused to be discharged while being moved on the member. Then, a test is performed to determine whether an electrostatic breakdown occurs in each of semiconductor devices. The electrical characteristics of each semiconductor device are measured after the charged static electricity has been removed. Each semiconductor device to be tested is incorporated in a package and has lead terminals connected to a semiconductor chip.

REFERENCES:
patent: 4806857 (1989-02-01), Inamura et al.
ISTFA: "New ESD Test Method", by Y. Satoh et al., 1986, pp. 91-94.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Test method of an electrostatic breakdown of a semiconductor dev does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Test method of an electrostatic breakdown of a semiconductor dev, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Test method of an electrostatic breakdown of a semiconductor dev will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-444329

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.