Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Lumped type parameters
Reexamination Certificate
2011-01-04
2011-01-04
He, Amy (Department: 2831)
Electricity: measuring and testing
Impedance, admittance or other quantities representative of...
Lumped type parameters
C324S525000, C324S755090
Reexamination Certificate
active
07863911
ABSTRACT:
A combined manufacturable wafer and test device for measuring a tunneling-magnetoresistance property of a tunneling-magnetoresistance, sensor-layer structure. The combined manufacturable wafer and test device comprises a tunneling-magnetoresistance, sensor-layer structure disposed on a substrate. The combined manufacturable wafer and test device also comprises a plurality of partially fabricated tunneling-magnetoresistance sensors; at least one of the partially fabricated tunneling-magnetoresistance sensors is disposed at one of a plurality of first locations. The test device is disposed on the substrate at a second location different from the plurality of first locations. The test device allows measurement of the tunneling-magnetoresistance property of the tunneling-magnetoresistance, sensor-layer structure using a current-in-plane-tunneling technique.
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Hong Ying
Jayasekara Wipul P.
Mauri Daniele
Seagle David J.
He Amy
Hitachi Global Storage Technologies - Netherlands B.V.
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