Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor
Patent
1988-07-25
1990-01-23
Karlsen, Ernest F.
Electricity: measuring and testing
Measuring, testing, or sensing electricity, per se
With rotor
324713, 324 731, G01R 3126, G01R 2714
Patent
active
048961086
ABSTRACT:
A test circuit is described for measuring the specific contact resistivity r.sub.c of self-aligned electrodes contacting underlying diffused regions at a major surface of an underlying semiconductor wafer, as well as the sheet (lateral) resistance r.sub.s of the underlying diffused regions in some embodiments. The test circuit illustratively includes a pair of test MOS or other type of transistors advantageously made by a self-aligned metallization process simultaneously with the other MOS or other type of transistors to be tested. The two test transistors share a common diffused region, a self-aligned common controlled electrode contacting a diffused region underneath it, and a common control electrode. During test operation, both est transistors are kept ON by means of an applied above-threshold control voltage, while a current source forces current through one of the transistors. The resulting voltage, developed across the common controlled electrode and the controlled electrode of the other transistor is a measure of the specific contact resistivity thereat.
REFERENCES:
patent: 4517225 (1985-05-01), Broadbent
patent: 4542340 (1985-09-01), Chakravarti et al.
patent: 4628144 (1986-12-01), Burger
patent: 4706015 (1987-11-01), Chen
patent: 4789825 (1988-12-01), Carelli et al.
J. G. Chern, "Determining Specific Contact Resistivity from Contact End Resistance Measurements," IEEE Electron Device Letters, vol. EDL-5, pp. 178-180 (1984).
W. M. Loh, K. Saraswat, R. W. Dutton, "Analysis and Scaling of Kelvin Resistors for Extraction of Specific Contact Resistivity," IEEE Electron Device Letters, vol. EDL-6, pp. 105-108 (1985).
T. J. Faith, R. S. Irven, S. K. Plante, J. J. O'Neill, Jr., "Contact resistance: Al and Al-Si to diffused N.sup.+ and P.sup.+ silicon," J. Vac. Sci. Technol., pp. 443-448 (1983).
S. J. Proctor, "A Direct Measurement of Interfacial Contact Resistance," IEEE Electron Device Letters, vol. EDL-3, pp. 294-296 (1982).
Lynch William T.
Ng Kwok K.
American Telephone and Telegraph Company AT&T Bell Laboratories
Caplan David I.
Karlsen Ernest F.
LandOfFree
Test circuit for measuring specific contact resistivity of self- does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Test circuit for measuring specific contact resistivity of self-, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Test circuit for measuring specific contact resistivity of self- will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-647056