Test cells for semiconductor yield improvement

Details Test cells for semiconductor yield improvement Test cells for semiconductor yield improvement

2007-12-14

2010-10-05

Tran, Minh-Loan T (Department: 2826)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Electrical characteristic sensed

C438S017000, C438S018000, C438S113000, C438S014000, C438S012000, C257S048000, C257SE21529, C257SE21531, C257SE21001, C257SE21002

Reexamination Certificate

active

07807480

ABSTRACT:
A test cell for localizing defects includes a first active region, a second active region formed substantially parallel to the first active region, a third active region formed substantially parallel to the first and second active regions, a fourth active region formed between the first and second active regions, and a fifth active region formed between the second and third active regions. The fourth and fifth active regions are formed adjacent to opposite end portions of the second active region. The fourth and fifth active regions are also formed substantially perpendicular to the second active region.

REFERENCES:
patent: 5872018 (1999-02-01), Lee et al.
patent: 6630381 (2003-10-01), Hazani
patent: 6737606 (2004-05-01), Peng et al.
patent: 6781151 (2004-08-01), Schultz et al.
patent: 6992369 (2006-01-01), Kostylev et al.
patent: 2003/0138978 (2003-07-01), Tanaka et al.
International Search Report mailed Nov. 18, 2005, for PCT Application No. PCT/US05/21416 filed Jun. 16, 2005, 1 page.

Affiliated with

Also associated with

Rating

Test cells for semiconductor yield improvement does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Test cells for semiconductor yield improvement, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Test cells for semiconductor yield improvement will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4238032