Terraced substrate semiconductor laser

Details Terraced substrate semiconductor laser Terraced substrate semiconductor laser

1980-05-21

1982-06-01

Davis, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

043330614

ABSTRACT:
A light emitting semiconductor device having a double hetero junction structure in which oscillation in a single lateral mode is stably effected. A stair-shaped step part is formed in a stripe shape upon the surface of a substrate. A current blocking layer of an opposite conductivity type is formed over the semiconductor substrate with a thickness such that the current blocking layer is interrupted along the upper edge of the stair-shaped step part to form a break area therein which acts as a current concentration region. Over the current blocking layer and break area are formed a lower clad layer, an active layer, an upper clad layer, and an ohmic contact layer.

REFERENCES:
patent: 4296387 (1981-10-01), Sugino et al.

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