Terraced substrate semiconductor laser

Details Terraced substrate semiconductor laser Terraced substrate semiconductor laser

1980-09-10

1982-11-09

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 46, H01S 319

Patent

active

043588506

ABSTRACT:
In a semiconductor laser comprising a terrace-shaped semiconductor substrate, a first clad layer formed on the semiconductor substrate, an active layer formed on the first clad layer and having two discontinuity places at bending portions of the first clad layer, a second clad layer formed on the active layer, and a current injection electrode above a lasing region in the active layer, the improvement is that a stable fundamental transverse lasing mode and a circular laser beam are obtainable from the lasing region definitely separated by two discontinuity places in the active layer.

REFERENCES:
patent: 4296387 (1981-10-01), Sugino et al.

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