Terraced heterostructure semiconductor laser

Details Terraced heterostructure semiconductor laser Terraced heterostructure semiconductor laser

1982-04-09

1984-07-17

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 48, H01S 319

Patent

active

044610084

ABSTRACT:
A semiconductor laser comprising a substrate with a pair of grooves in the surface thereof and a first confinement layer which overlies the surface of the substrate and has a terrace in its surface. An active layer overlies the surface of the first confinement layer and has a portion of maximum thickness and its recombination region over the concave portion of the terrace in the first confinement layer. A weak asymmetric positive index optical guide is thus formed which supports only the fundamental lateral optical mode.

REFERENCES:
patent: 3701047 (1972-10-01), Caplan et al.
patent: 3753801 (1973-08-01), Lockwood et al.
patent: 4092659 (1978-05-01), Ettenberg
patent: 4178564 (1979-12-01), Ladany et al.
patent: 4215319 (1980-07-01), Botez
patent: 4296387 (1981-10-01), Sugino et al.
patent: 4347486 (1982-08-01), Botez
D. Botez et al., "Constricted Double-Heterostructure (AlGa)As Diode Lasers," Applied Physics Letters, 32(4), Feb. 15, 1978.
G. H. Olsen et al., "Universal Stain/Etchant for Interfaces in III-V Compounds," Journal of Applied Physics, vol. 45(11), Nov. 1974.
T. Sugino et al., "Fundamental Transverse and Longitudinal Mode Oscillation in Terraced Substrate GaAs-(GaAl)As Lasers," IEEE Journal of Quantum Electronics, vol. QE-15, No. 8, Aug. 1979.

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