Terraced film stack

Chemistry: molecular biology and microbiology – Animal cell – per se ; composition thereof; process of... – Solid support and method of culturing cells on said solid...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S669000, C257S300000, C257SE21646, C257SE27084

Reexamination Certificate

active

11158220

ABSTRACT:
A process and apparatus directed to forming a terraced film stack of a semiconductor device, for example, a DRAM memory device, is disclosed. The present invention addresses etch undercut resulting from materials of different etch selectivity used in the film stack, which if not addressed can cause device failure.

REFERENCES:
patent: 2004/0253813 (2004-12-01), Son et al.
patent: 2005/0014334 (2005-01-01), Herner et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Terraced film stack does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Terraced film stack, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Terraced film stack will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3871672

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.