Terrace-shaped substrate semiconductor laser

Details Terrace-shaped substrate semiconductor laser Terrace-shaped substrate semiconductor laser

1981-06-04

1984-06-26

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, 357 17, H01S 319

Patent

active

044569998

ABSTRACT:
A terrace-substrate laser is improved by forming a stripe-shaped impurity diffused current-injection region (27) from the cap layer (25) at least so as to reach the oblique lasing region (231) of the active layer (23), so that the corner part of the current injection region (27) touches the lasing region (231); thereby current injection efficiency to the lasing region is highly improved and the injected current is effectively limited in the oblique lasing region even when a large current is injected, and furthermore, a threshold current can be greatly reduced. This laser can perform a stable fundamental transverse mode oscillation even at a large current operation.

REFERENCES:
patent: 4105955 (1978-08-01), Hayashi et al.

Affiliated with

Also associated with

Rating

Terrace-shaped substrate semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Terrace-shaped substrate semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Terrace-shaped substrate semiconductor laser will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2235378