Ternary logic circuit using resonant-tunneling transistors

Details Ternary logic circuit using resonant-tunneling transistors Ternary logic circuit using resonant-tunneling transistors

1989-02-15

1990-09-11

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 16, 357 57, 365168, H01L 2712, H01L 4500, H01L 4902

Patent

active

049566814

ABSTRACT:
A logic gate including a resonant-tunneling transistor and a resistor connected in series thereto. The resonant-tunneling transistor has a superlattice structure. The resonant-tunneling transistor may be a resonant-tunneling hot electron transistor or a resonant-tunneling bipolar transistor. The resonant-tunneling transistor conducts a current between a collector and an emitter. The current has one of at least three different current values in response to a base voltage of one of three different voltage values. The third current value is between the first and second current values, and a second voltage value is between the first and third voltage values. The logic gate outputs one of at least three states, a high state, a low state and a state approximately between the high and low states in response to a signal applied to the logic gate. The signal has an amplitude of one of the first to third voltage values. A logic circuit includes at least three connected resonant-tunneling transistors. The logic circuit maintains at least three states, a high state, a low state, and a state approximately between the high and low states in the respective three resonant-tunneling transistors in response to a pulse signal applied to a base of one of the resonant-tunneling transistors.

REFERENCES:
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patent: 3155845 (1964-11-01), Gruodis et al.
patent: 3660678 (1972-05-01), Maley et al.
patent: 3996484 (1976-12-01), Abraham
patent: 4712121 (1987-12-01), Yokoyama
Seidman, A. et al, Electronics, Devices, Discrete and Integrated Circuits, Merrill, 1977, p. 393.
Danner, D. R., "Reading of a Three-Position Switch . . . ", IBM Tech. Disc. Bull, Sep. 1984, pp. 2305-2306.
N. Yokoyama et al., A New Functional, Resonant-Tunnelling Hot Electron Transistor (RHET), Nov. 1985, Japanese Journal of Applied Physics, vol. 24, No. 11, pp. L853-L854.

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