Ternary content addressable memory having reduced leakage...

Static information storage and retrieval – Associative memories – Compare/search/match circuit

Reexamination Certificate

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C365S049100, C365S049110, C365S051000, C365S063000

Reexamination Certificate

active

07944724

ABSTRACT:
A column of ternary content addressable memory (TCAM) cells includes a bit line pair that is twisted at a location at or near the center of the column. Data is written to (and read from) TCAM cells located above the twist location with a first bit line polarity. Data is written to (and read from) TCAM cells located below the twist location with a second bit line polarity, opposite the first bit line polarity. As a result, read leakage currents introduced by TCAM cells storing ‘Don't Care’ values are reduced.

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