Ternary content addressable memory cell

Details Ternary content addressable memory cell Ternary content addressable memory cell

2006-09-26

2006-09-26

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

C257S393000, C257S903000

Reexamination Certificate

active

07112831

ABSTRACT:
Ternary CAM cells are provided. The ternary CAM cell includes a pair of half cells. Each of the half cells includes an isolation layer formed at a predetermined region of a semiconductor substrate to define a match cell active region. A search gate electrode and a node gate electrode are placed to cross over the match cell active region. A match line is electrically connected to the match cell active region, which is adjacent to the node gate electrode and is located opposite the search gate electrode. An SRAM cell is provided at the semiconductor substrate adjacent to the match cell active region. The node gate electrode is electrically connected to one of a pair of storage nodes of the SRAM cell.

REFERENCES:
patent: 4646271 (1987-02-01), Uchiyama
patent: 4780845 (1988-10-01), Threewitt
patent: 5319590 (1994-06-01), Montoye
patent: 5490102 (1996-02-01), Jubran
patent: 5495382 (1996-02-01), Albon
patent: 2004/0061143 (2004-04-01), Koolhaas et al.

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