Static information storage and retrieval – Associative memories – Ferroelectric cell
Reexamination Certificate
2006-05-09
2006-05-09
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Associative memories
Ferroelectric cell
C365S189070
Reexamination Certificate
active
07042747
ABSTRACT:
Two new ternary CAM bitcell design options are presented that provide compact layout solutions while maximizing matchline channels routing through the cells. In both layouts, the first inventive layout, an asymmetric layout of the 6T-SRAM bitcell is used to improve ease of layout, density, and performance of ternary CAM cells. In the second inventive layout, n-type diffusions for the SRAM bitcell and the comparison circuit are separated, creating a bitcell having a more even cell aspect ratio.
REFERENCES:
patent: 6807077 (2004-10-01), Noda et al.
patent: 2004/0114411 (2004-06-01), Noda et al.
patent: 2004/0223353 (2004-11-01), Kim et al.
Castagnetti Ruggero
Glenn Joseph E.
Venkatraman Ramnath
Hoang Huan
Yee & Associates P.C.
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