Ternary CAM bitcells

Static information storage and retrieval – Associative memories – Ferroelectric cell

Reexamination Certificate

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C365S189070

Reexamination Certificate

active

07042747

ABSTRACT:
Two new ternary CAM bitcell design options are presented that provide compact layout solutions while maximizing matchline channels routing through the cells. In both layouts, the first inventive layout, an asymmetric layout of the 6T-SRAM bitcell is used to improve ease of layout, density, and performance of ternary CAM cells. In the second inventive layout, n-type diffusions for the SRAM bitcell and the comparison circuit are separated, creating a bitcell having a more even cell aspect ratio.

REFERENCES:
patent: 6807077 (2004-10-01), Noda et al.
patent: 2004/0114411 (2004-06-01), Noda et al.
patent: 2004/0223353 (2004-11-01), Kim et al.

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