Termination structure for MOSgated power devices

Details Termination structure for MOSgated power devices Termination structure for MOSgated power devices

2005-05-31

2005-05-31

Loke, Steven (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

C257S626000, C257S646000, C257S339000, C257S341000, C257S342000, C257S496000, C257S329000, C257S330000, C257S331000

Reexamination Certificate

active

06900523

ABSTRACT:
The termination of a MOSgated device is formed by a trench bevel which surrounds the active device area. The trench bevel has flat walls which extend into and through the epitaxial layer containing the active area which has a lateral extend equal to or less than the thickness of the epitaxial layer. The surface of the bevel is coated with a resistive film, preferably, an amorphous silicon which connects the device source to the device drain to cause the electric field in the epitaxial silicon to the linearly distributed over the length of the bevel.

REFERENCES:
patent: 6724021 (2004-04-01), Van Dalen et al.

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