Termination structure for a semiconductor device

Details Termination structure for a semiconductor device Termination structure for a semiconductor device

2005-09-06

2005-09-06

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S506000, C257S513000, C257S519000, C257S520000, C257S501000, C257S446000, C257S499000, C438S206000, C438S207000

Reexamination Certificate

active

06940145

ABSTRACT:
A semiconductor device (e.g. MOSFET or IGBT) comprises active and termination regions (1,2) formed in a semiconductor substrate (4). The substrate (4) has an upper surface and a termination including a trench (12) extending into the substrate (4) from the upper surface within the termination region (1). Termination trench (12) is at least partly filled with an insulating material (13) which extends from the termination trench (12) to overlie adjacent regions of the device above the surface. A channel stop region (11) extends laterally from a side wall of the termination trench (12) into the substrate (4).

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