Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having only two terminals and no control electrode – e.g.,...
Reexamination Certificate
2005-10-18
2005-10-18
Tran, Minh-Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Having only two terminals and no control electrode , e.g.,...
C257S112000, C257S155000, C257S601000, C257S077000
Reexamination Certificate
active
06956249
ABSTRACT:
The invention relates to a semiconductor component which is capable of blocking such as an (IGBT), a thyristor, a GTO or diodes, especially schottky diodes. An insulator profile section (10a, 10b, 10c, 10d, 11) provided in the border area of an anode metallic coating (1, 31) is fixed (directly in the edge area) on the substrate (9) of the component. The insulator profile has a curved area (KB) and a base area (SB), said curved area having a surface (OF) which begins flat and curves outward and upward in a steadily increasing manner. A metallic coating (MET1; 30a, 30b, 30c, 30d, 31b) is deposited on the surface (OF). Said coating directly follows the surface curvature and laterally extends the inner anode metallic coating. The upper end of the curved metallic coating (MET1; 30a, 30b. . . ) is distanced and insulated from one of these surrounding outer metallic coatings (MET2; 3) by the surrounding base area (SB) of the insulator profile (10a, . . . , 11) such that an extensively constant course of the line of force which evades extreme values results between both metallic coatings (1, 31, MET1; 3, MET2) when reverse voltage or blocking voltage is applied between the interspaced metallic coatings.
REFERENCES:
patent: 3706128 (1972-12-01), Heer
patent: 4633292 (1986-12-01), Fellinger et al.
patent: 4680601 (1987-07-01), Mitlehner et al.
patent: 4764249 (1988-08-01), Gobrecht et al.
patent: 5914500 (1999-06-01), Bakowski et al.
patent: 6064103 (2000-05-01), Pfirsch
patent: 6426540 (2002-07-01), Sittig et al.
patent: 196 05 633 (1996-12-01), None
patent: 63038259 (1988-02-01), None
XP-002102107—Tapered Sidewall Schottky Diodes with Very Low Taper Angels, Japanese Journal of Applied Physics, vol. 22 (1983) Supplement 22-1, pp. 137-140.
XP-002102106—The Contour of an Optimal Field Plate—An Analytical Approach, K.P. Brieger, Elmar Falck, Willi Gerlach; IEEE Transactions on Electron Devices, vol. 35, No. 5, May 1988.
0018-9283/92—Multistep Field Plates for High-Voltage Plannar p-n Junctions, IEEE Transactions on Electron Devices, Wolfgang Feiler, Elmer Falck and Willi Gerlach, vol. 38, No. 6 (7 pages) Jun. 1992.
0038-1101(95) 00195-6—Theoretical Investigation of Planar Junction Termination, T. Drabe and R. Sittig—Solid—State Electronics vol. 39, No. 3, pp. 323-328, 1996.
Field Distribution Near the Surface of Beveled P-N Junctions in High-Voltage Devices; Jozef Cornu; IEEE Transactions on Electron Devices, vol. Ed-20, No. 4, Apr. 1973, pp 347-352.
Modern Power Devices; B. Jayant Baliga; A Wiley-Interscience Publication, John Wiley & Sons, Inc.; 1987; 3 pages.
Surface Breakdown in Silicon Planar Diodes Equipped with Field Plate; F. Conti and M. Conti; Solid-State Electronics, 1972, Vo. 15, pp 93-105.
Dudde Ralf-Ulrich
Nagel Detlef
Reimer Klaus
Sittig Roland
Wagner Bernd
Duane Morris LLP
Fraunhoffer-Gesellschaft Zur Foerderung Der Angewandten Forschun
Tran Minh-Loan
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