Termination design with multiple spiral trench rings

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257S528000, C257SE27009, C257SE27010, C257SE21022, C438S379000, C438S570000

Reexamination Certificate

active

11073123

ABSTRACT:
A semiconductor device having a termination structure, which includes at least one spiral resistor disposed within a spiral trench and connected between two power poles of the device.

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Diffused Spiral Junction Termination Structure: Modeling and Realization—Dejan Krizaj, Slavko Amon, Georges Charitat—pp. 247-250—1996 IEEE.
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K. Endo et al., “A 500V 1A 1-Chip Inverter IC With a New Electric Field Reduction Structure,” Proc. Of the 6thInternat. Symposium on Power Semiconductor Devices & ICs, Davos, Switzerland, (May 31-Jun. 2, 1994), pp. 379-383.

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