Termination and contact structures for a high voltage...

Details Termination and contact structures for a high voltage... Termination and contact structures for a high voltage...

2011-05-10

2011-05-10

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S076000, C257S188000

Reexamination Certificate

active

07939853

ABSTRACT:
A semiconductor device is provided that includes a substrate, a first active layer disposed over the substrate, and a second active layer disposed on the first active layer. The second active layer has a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer. A termination layer, which is disposed on the second active layer, includes InGaN. Source, gate and drain contacts are disposed on the termination layer.

REFERENCES:
patent: 7026665 (2006-04-01), Smart et al.
patent: 2006/0108606 (2006-05-01), Saxler et al.
patent: 2006/0244010 (2006-11-01), Saxler

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