Terminal pad structures and methods of fabricating same

Details Terminal pad structures and methods of fabricating same Terminal pad structures and methods of fabricating same

2008-04-22

2008-04-22

Im, Junghwa M. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S750000, C257S784000, C257S747000, C257S760000, C257S762000, C257S763000, C257S764000, C257S737000, C257S780000, C257SE23020, C257SE23021, C438S118000

Reexamination Certificate

active

07361993

ABSTRACT:
Terminal pads and methods of fabricating terminal pads. The methods including forming a conductive diffusion barrier under a conductive pad in or overlapped by a passivation layer comprised of multiple dielectric layers including diffusion barrier layers. The methods including forming the terminal pads subtractively or by a damascene process.

REFERENCES:
patent: 6033939 (2000-03-01), Agarwala et al.
patent: 6376353 (2002-04-01), Zhou et al.
patent: 6451681 (2002-09-01), Greer
patent: 6768199 (2004-07-01), Yoon et al.
patent: 6828677 (2004-12-01), Yap et al.
patent: 7122902 (2006-10-01), Hatano et al.

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