Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2006-10-16
2010-10-12
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C257S102000
Reexamination Certificate
active
07811837
ABSTRACT:
A method of fabricating an electroluminescent device includes, on a prepared substrate, depositing a rare earth-doped silicon-rich layer on gate oxide layer as a light emitting layer; and annealing and oxidizing the structure to repair any damage caused to the rare earth-doped silicon-rich layer; and incorporating the electroluminescent device into a CMOS IC. An electroluminescent device fabricated according to the method of the invention includes a substrate, a rare earth-doped silicon-rich layer formed on the gate oxide layer for emitting a light of a pre-determined wavelength; a top electrode formed on the rare earth-doped silicon-rich layer; and associated CMOS IC structures fabricated thereabout.
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Castagna et al.,High efficiency light emission devices in silicon, Mat. Res. Soc. Symp, vol. 770, (2003).
Sun et al.,Bright green electroluminescence from Tb3+in silicon metal-oxide-semiconductor devices, J. Applied Physics 97 (2005).
Gao Wei
Hsu Sheng Teng
Li Tingkai
Ono Yoshi
Chi Suberr
Law Office of Gerald Maliszewski
Maliszewski Gerald
Sharp Laboratories of America Inc.
Vu David
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