Terbium aluminate and method for its production

Details Terbium aluminate and method for its production Terbium aluminate and method for its production

1994-01-28

1996-02-27

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 37, 117 48, 117 77, 117950, 2523014R, 2523016R, C30B 2920

Patent

active

054939844

ABSTRACT:
A method for producing a single crystal or polycrystal of terbium aluminate containing at least terbium, aluminum and oxygen and represented by the formula Tb.sub.1-x Al.sub.1+x O.sub.3 wherein -0.5.ltoreq.x.ltoreq.0.5, which comprises growing the single crystal or polycrystal using a reducing gas atmosphere or a neutral gas atmosphere as an atmosphere for crystal growth.

REFERENCES:
patent: 4096088 (1978-06-01), Ranby et al.
patent: 4837481 (1989-06-01), Verstegen et al.
Shishido et al, "Growth of Race Earth Aluminate Crystals From Molten Solutions" Jour. of Alloys and Compounds, 192 (1993) Feb. pp. 84-86.

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