Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2006-07-18
2009-02-03
Louie, Wai-Sing (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S045000, C438S046000, C438S047000, C257SE33008
Reexamination Certificate
active
07485476
ABSTRACT:
A method is presented for fabricating a semiconductor device operable to generate a THz spectral range radiation in response to an external field. According to this method, a heterostructure is formed from selected layers. The layers include at least first and second semiconductor layers made of materials having a certain initial overlap between the valence band of the second layer material and the conduction band of the first layer material. The heterostructure layers are arranged with a selected layout providing a quantum mechanical coupling between an electron quantum well (EQW) in said first layer and a hole quantum well (HQW) in said second layer. The layout is selected so as to define a predetermined arrangement of a plurality of energy subbands and a predetermined dispersion of these subbands to define a desired effective overlap between the energy subbands of said conduction and valence bands. This enables the device operation for generation of the THz spectral range radiation originating from multiple radiative transitions of non-equilibrium carriers including at least one transition from transitions between the following: energy subbands of the EQW, energy subbands of the HQW, and ground energy electron subband of the EQW and ground energy hole subband of the HQW.
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Laikhtman Boris
Shvartsman Leonid
Browdy and Neimark , P.L.L.C.
Louie Wai-Sing
Yissum Research Development Company of the Hebrew University of
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