Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor
Reexamination Certificate
2007-02-13
2007-02-13
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Active layer of indirect band gap semiconductor
C257S087000, C257S094000, C257S102000, C257S103000
Reexamination Certificate
active
10743268
ABSTRACT:
A semiconductor device and method of its fabrication are provided to enable the device operation in a THz spectral range. The device comprises a heterostructure including at least first and second semiconductor layers. The first and second layers are made of materials providing a quantum mechanical coupling between an electron quantum well (EQW) in the first layer and a hole quantum well (HQW) in the second layer, and providing an overlap between the valence band of the material of the second layer and the conduction band of the material of the first layer. A layout of the layers is selected so as to provide a predetermined dispersion of energy subbands in the conduction band of the first layer and the valence band of the second layer. An application of an external bias field across the first and second layers causes THz radiation originating from radiative transitions of non-equilibrium carriers between at least one of the following: neighboring energy subbands of the EQW, neighboring energy subbands of the HQW, and ground energy subbands of the EQW and HQW.
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Laikhtman Boris
Shvartsman Leonid
Browdy and Neimark PLLC
Louie Wai-Sing
Yissum Research Development Company of the Hebrew University of
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