Terahertz oscillation device

Details Terahertz oscillation device Terahertz oscillation device

2011-03-01

2011-03-01

Chang, Joseph (Department: 2817)

Oscillators

Solid state active element oscillator

Significant distributed parameter resonator

C331S096000, C331S1070DP, C331S1070SL

Reexamination Certificate

active

07898348

ABSTRACT:
A terahertz oscillation device includes a first electrode placed on the semiconductor substrate; a second electrode placed via the insulating layer toward the first electrode, and opposes the first electrode to be placed on the semiconductor substrate; a MIM reflector formed between the first electrode and the second electrode by sandwiching the insulating layer; a resonator adjoining of the MIM reflector and is placed between the first electrode and the second electrode which oppose on the semiconductor substrate; an active element placed at the substantially central part of the resonator; a waveguide adjoining of the resonator and is placed between the first electrode and the second electrode which oppose on the semiconductor substrate; and a horn apertural area adjoining of the waveguide and is placed between the first electrode and the second electrode which oppose on the semiconductor substrate.

REFERENCES:
patent: 4278951 (1981-07-01), Cachier et al.
patent: 5341138 (1994-08-01), Ono et al.
patent: 5675295 (1997-10-01), Brebels et al.
patent: 2009/0051452 (2009-02-01), Asada et al.
patent: 2007-124250 (2007-05-01), None

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