Tensile strained GE for electronic and optoelectronic...

Details Tensile strained GE for electronic and optoelectronic... Tensile strained GE for electronic and optoelectronic...

2008-11-06

2011-11-22

Nguyen, Ha Tran T (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Heterojunction formed between semiconductor materials which...

C257S615000, C257SE21086, C257SE21123, C257SE21127, C257S192000, C438S933000, C438S938000, C438S172000

Reexamination Certificate

active

08063413

ABSTRACT:
A semiconductor structure is provided. The semiconductor structure includes one or more III-IV material-based semiconductor layers. A tensile-strained Ge layer is formed on the one or more a III-IV material-based semiconductor layers. The tensile-strained Ge layer is produced through lattice-mismatched heteroepitaxy on the one or more a III-IV material-based semiconductor layers.

REFERENCES:
patent: 6222200 (2001-04-01), Svilans
patent: 6897471 (2005-05-01), Soref et al.
patent: 2004/0053477 (2004-03-01), Ghyselen et al.
patent: 2005/0164473 (2005-07-01), Liu et al.
patent: 2005/0212061 (2005-09-01), Langdo et al.
Jiang et al, “Strains in Si Substrate Induced by Formation of Ge Islands”, 2000, Proceedings of SPIE, vol. 4086, pp. 108-111.
Rioux et al., “Structural and electronic properties of strained Ge/InP(100) heterostructures” Physical Review B. Mar. 15, 1992, vol. 45, No. 11, pp. 6060-6068.
Jain et al., “Diffusion length variation and proton damage coefficients for InP/InxGa1-xAs/GaAs solar cells” J. Appl. Phys. 74 (4), Aug. 15, 1993, pp. 2948-2950.
Fang et al., Perfectly tetragonal, tensile-strained Ge on Ge1-ySny buffered Si(100), Applied Physics Letters, 90, 2007, pp. 061915-1-061915-3.
Demirel et al., “Reduction in the outdiffusion into epitaxial Ge grown on GaAs using a thin AlAs interlayer” 1992 IOP Publishing Ltd, pp. 49-53.
Soref et al., “Advances in SiGeSn technology” 2007 Materials Research Society, vol. 22, No. 12, pp. 3281-3291.
Liu et al., “Silicidation-induced band gap shrinkage in Ge epitaxial films on Si” Applied Physics Letters, vol. 84, No. 5, Feb. 2004, pp. 660-662.
Fang et al., “Perfectly tetragonal, tensil-strained Ge on Ge1-ySny Buffered Si (100)” Applied Physics Letters 90, 061915 (2007) pp. 061915-1-061915-3.
Liu et al., “High-performance, tensile strained Ge p-i-n photodetectors on a Si platform” Applied Physics Letters, 87, (2005) pp. 103501-1-103501-3.

Affiliated with

Also associated with

Rating

Tensile strained GE for electronic and optoelectronic... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Tensile strained GE for electronic and optoelectronic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tensile strained GE for electronic and optoelectronic... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4276700