Tensile strained blue green II-VI quantum well Laser

Details Tensile strained blue green II-VI quantum well Laser Tensile strained blue green II-VI quantum well Laser

1994-01-26

1994-12-27

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 46, 257 13, 257 14, 257 22, 257 78, 257103, H01S 319

Patent

active

053772148

ABSTRACT:
There is disclosed a tensile strained blue-green II-VI quantum well laser. The tensile strained blue-green II-VI quantum well laser comprises of a semiconductor substrate; a buffer layer formed on the semiconductor substrate; a first ZnSe cladding layer formed on the buffer layer; a multi-quantum well layer formed on the first ZnSe cladding layer, consisting of a ZnS.sub.y Se.sub.1-y active region and a Mg.sub.z Zn.sub.1-z S.sub.w Se.sub.1-w barrier region; a current-restricting layer formed on the multi-quantum well layer; a second ZnSe cladding layer formed on the current-restricting layer; and a cap layer formed on the second ZnSe cladding layer. The inventive tensile strained blue-green II-VI quantum well laser is capable of reducing the oscillation wavelength into not more than 500 nm at room temperature and of lowering the threshold current density to as low as 1,000 A/cm.sup.2.

REFERENCES:
patent: 5090790 (1992-02-01), Zucker
patent: 5260958 (1993-11-01), Fitzpatrick
patent: 5268918 (1993-12-01), Akimoto et al.
patent: 5319219 (1994-06-01), Cheng et al.

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