Tempsense FET with implanted line of diodes (EPS)

Details Tempsense FET with implanted line of diodes (EPS) Tempsense FET with implanted line of diodes (EPS)

1998-10-02

2000-10-17

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

257467, H01L 31058

Patent

active

061336165

ABSTRACT:
A MOSgated device has a plurality of spaced polysilicon diodes on top of a thin insulation layer atop a MOSgated device die. A constant forward current through the diodes produces a voltage drop which is related to the die temperature. The anode and cathode ends of the diode string are connected to the metal pads on the die surface. A first capacitor connects the calkode terminal of the string to the MOSgated device drain electrode and a second capacitor is connected across the anode and cathode ends of the diode string. Both the anode and cathode are unaffected by noise at the drain electrode. The diode string is located within a narrow strip along the die center and is separated from the MOSFET active area by a very narrow termination region which excludes a metal bus.

REFERENCES:
patent: 5726481 (1998-03-01), Moody
patent: 5736769 (1998-04-01), Nishiura et al.
patent: 5949121 (1999-09-01), Qualich et al.

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