Template type substrate and a method of preparing the same

Details Template type substrate and a method of preparing the same Template type substrate and a method of preparing the same

2003-12-11

2008-08-12

Kunemund, Robert M (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having growth from a solution comprising a solvent which is...

C117S072000, C117S075000, C117S084000, C117S094000

Reexamination Certificate

active

07410539

ABSTRACT:
The template type substrate is used for opto-electric or electrical devices and comprises A) a layer of bulk mono-crystal nitride containing at least one element of alkali metals (Group I, IUPAC 1989) and B) a layer of nitride grown by means of vapor phase epitaxy growth wherein the layer A) and the layer B) are combined at non N-polar face of the layer A) and N-polar face of the layer B). Therefore, the template type substrate has a good dislocation density and a good value of FWHM of the X-ray rocking curve from (0002) plane less than 80, so that the resulting template type substrate is very useful for the epitaxy substrate from gaseous phase such as MOCVD, MBE and HVPE, resulting in possibility of making good opto-electric devices such as Laser Diode and large-output LED and good electric devices such as MOSFET.

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Liu, L. et al., “Substrate for Gallium Nitride Epitaxy”, Materials Science and Engineering, 2002, pp. 61-127, R 37, No. 3, Elsevier Science B.V.

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