Temperature, supply and process-insensitive CMOS reference struc

Details Temperature, supply and process-insensitive CMOS reference struc Temperature, supply and process-insensitive CMOS reference struc

1998-08-11

2000-08-22

Zweizig, Jeffrey

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

327512, G05F 110

Patent

active

061078689

ABSTRACT:
CMOS reference structures (e.g., voltage, current and resistance structures) are provided that are substantially insensitive to temperature, supply voltages and track fabrication processes. The structures include a V.sub.t -referenced source, a sensor and a summer. The source generates a source voltage and a feed-forward current that may have an error term and the sensor generates a feedback current that has a correction term that substantially offsets the error to stabilize a sum current. In different structure embodiments, voltage, current and resistance references are responsive to the stabilized sum current. The source, sensor and summer are preferably realized with MOSFETs whose channel width-to-length ratios are chosen to enhance the temperature insensitivity of the references.

REFERENCES:
patent: 4789819 (1988-12-01), Nelson
patent: 5349286 (1994-09-01), Mrrshall et al.
patent: 5798637 (1998-08-01), Kim et al.
Gray, Paul R., et al., Analysis and Design of Analog Integrated Circuits, John Wiley and Son, third edition, 1993, New York, pp. 270, 271 and 322-328.
Tsividis, Yannis, Operation and Modeling of the MOS Transistor, McGraw Hill, 1987, New York, p. 148-149.

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