Temperature-stable current source

Details Temperature-stable current source Temperature-stable current source

1995-05-31

1997-07-01

Wong, Peter

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

323907, 365226, G05F 316

Patent

active

056442165

ABSTRACT:
In order to give the current the quality of low sensitivity to temperature, a first MOS transistor and a second MOS transistor supplied by a current mirror have their sources connected to the ground, with the drain and the gate of the first transistor being connected to the gate of the second transistor by means of a resistor. The quotient of the dimensional ratios of the transistors is equal to the coefficient of the current mirror and the transistors are doped so that the threshold of the second transistor is greater than that of the first one. Application notably to ramp generators for the programming of EEPROM cells.

REFERENCES:
patent: 4031456 (1977-06-01), Shimada et al.
patent: 4300091 (1981-11-01), Schade, Jr.
patent: 5180967 (1993-01-01), Yamazaki
patent: 5512855 (1996-04-01), Kimura

Affiliated with

Also associated with

Rating

Temperature-stable current source does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Temperature-stable current source, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Temperature-stable current source will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-600060