Temperature stabilized semiconductor delay element

Details Temperature stabilized semiconductor delay element Temperature stabilized semiconductor delay element

1980-08-15

1983-06-07

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307310, 307303, 357 51, H03K 5159, H03K 326

Patent

active

043873103

ABSTRACT:
A temperature stabilized semiconductor delay element is comprised of an emitter and collector separated on a substrate by distance l. A voltage applied to ohmic contacts on either side of the emitter and collector provides an electric field E, whereby the delay .tau. between the emitter and collector is given by .tau.=l.sup.2 /.mu.E, where .mu. is the semiconductor mobility which varies with temperature. A compensation device located on the same substrate as the delay device provides the delay device with an electric field E=K/.mu., where K is constant, such that .tau.=l.sup.2 /K. The time delay .tau. is thus independent of temperature.

REFERENCES:
patent: 2827259 (1960-03-01), Neal
patent: 3089037 (1963-05-01), Ross
patent: 3656034 (1972-04-01), Rideout
patent: 3848141 (1974-11-01), Sterzer
patent: 4072866 (1978-02-01), Kabat
patent: 4100565 (1978-07-01), Khajezgdeh et al.

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