Thermal measuring and testing – Temperature measurement – By electrical or magnetic heat sensor
Patent
1996-08-06
1998-07-07
Chilcot, Richard
Thermal measuring and testing
Temperature measurement
By electrical or magnetic heat sensor
374176, 374171, 364577, 364557, 338225D, G01K 108
Patent
active
057758115
DESCRIPTION:
BRIEF SUMMARY
TECHNICAL FIELD
The present invention relates generally to a temperature sensor system and, in particular, a temperature-sensitive device using a micro-crystalline semiconductor thin film, a temperature sensor and a temperature sensor system, as well as a method for deciding a temperature as an interpolation value, which establish a technique of accurately measuring a temperature ranging from room temperature to a very low temperature in a magnetic field (for example, with an accuracy of the order of milli-Kelvin) as a temperature measuring technique for use in a very low temperature (a few Kelvins, sub-Kelvin) where a superconductivity and superfluidity are observed and which can be applied to the basic measurement of the properties of material and stable excitation of a superconductive magnet and to apparatus utilizing a superconductivity, superfluidity, etc.
BACKGROUND OF ART
Conventionally, a platinum resistance thermometer, etc., have been extensively used as a practical standard in achieving accurate temperature measurement (hereinafter referred to as the temperature measurement) in a range from room temperature to a very low temperature.
These thermometers, however, have a drawback in that their resistance value varies in a magnetic field.
It has been indicated that accurate temperature measurement may be achieved under a magnetic field, by the platinum resistance thermometer, through resistance correction. However, its usable temperature range is restricted due to a residual resistance specific to that metal involved in the very low temperature and the resistance under magnetic field dependence involved greatly affects the temperature measurement in a temperature as low as below 30 Kelvin (hereinafter referred to simply as K). In actual practice, difficulty has been encountered in the correction of such a resistance.
In the temperature measurement under a magnetic field use has been made of a carbon glass resistance thermometer utilizing the temperature vs. resistance dependence of the carbon glass.
Even with the carbon glass resistance thermometer there arises an error of about 100 mK in a temperature of 4.2 K under a flux density of 8 teslas (hereinafter referred to simply as T) and, further, a greater temperature-sensitivity difference between the very low temperature and the neighborhood of room temperature.
That is, the carbon glass resistance thermometer has a specific characteristic such that it is relatively effective to the temperature measurement under a magnetic field, but that it is not suitable to the measurement in a broader temperature range.
It is much expected that a temperature sensor system be realized to achieve accurate temperature measurement both under a magnetic field and in a broader temperature range.
In order to establish the temperature measuring technique in a low-temperature magnetic field whereby it is possible to achieve both the accurate temperature measurement under a magnetic and that in a broader temperature range as set out above, the inventors of the present application have thus far directed their attention to a micro-crystalline semiconductor thin film promising as a temperature-sensitivity material and have studied it.
That is, the inventors prepared a temperature sensor device (hereinafter referred to as a temperature sensor device) using a micro-crystalline semiconductor thin film and measurements were made for the temperature vs. resistance dependence and resistance vs. magnetic field dependence.
As a result it has been confirmed that the micro-crystalline silicon germanium reveals a nearly established, predetermined temperature-resistance relation (R=aT.sup.b . . . . . . R: a resistance, T: a temperature, a, b: arbitrary constants) in a substantially zero magnetic field over a range from a very low temperature to room temperature and is proved very promising as a temperature sensor device (see Anritsu Technical No. 67, Mar. 1994).
Further, the inventors of the present application made measurements for the resistance vs. magnetic field dependence in a
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Anritsu Technical No. 67, pp. 15-21; issued Mar. 1994.
H.H. Sample; "Low-temperature Thermometry in High Magnetic Fields, V. Carbon-glass Resistors", Aug. 1982; pp. 1129-1135; Rev. Sci. Instru. vol. 53, No. 8.
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Hiraoka Jun
Kodato Setsuo
Amrozowicz Paul D.
Anritsu Corporation
Chilcot Richard
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