Temperature sensor for high power very large scale...

Details Temperature sensor for high power very large scale... Temperature sensor for high power very large scale...

2007-02-13

2007-02-13

Dang, Phuc T. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Responsive to non-optical, non-electrical signal

C257S467000, C438S014000

Reexamination Certificate

active

10899768

ABSTRACT:
Disclosed is a temperature sensor for an integrated circuit having at least one field effect transistor (FET) having a polysilicon gate, in which a current and a voltage is supplied to the polysilicon gate, changes in the current and the voltage of the polysilicon gate are monitored, wherein the polysilicon gate of the at least one FET is electrically isolated from other components of the integrated circuit, and the changes in the current or voltage are used to calculate a change in resistance of the polysilicon gate, and the change in resistance of the polysilicon gate is used to calculate a temperature change within the integrated circuit.

REFERENCES:
patent: 5683569 (1997-11-01), Chung et al.
patent: 6252277 (2001-06-01), Chan et al.
patent: 6261935 (2001-07-01), See et al.
patent: 6456104 (2002-09-01), Guarin et al.
patent: 6573169 (2003-06-01), Noble et al.
patent: 6774713 (2004-08-01), Watanabe
patent: 2003/0076153 (2003-04-01), Shakeri et al.
patent: 2004/0042529 (2004-03-01), Covi et al.

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