Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-11-04
2008-09-16
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S299000, C257S059000, C257S443000, C438S059000, C349S141000, C349S047000, C349S139000
Reexamination Certificate
active
07425725
ABSTRACT:
A sensor is provided, which includes a substrate, an insulating layer formed on the substrate, a semiconductor formed on the insulating layer, an ohmic contact formed on the semiconductor, a sensor input electrode and a sensor output electrode formed on the ohmic contact, and a passivation layer formed on the sensor input electrode and the sensor output electrode. A sensor control electrode may also be formed between the substrate and the insulating layer. A thin film transistor array panel including the sensor and a liquid crystal display panel including the sensor are further provided.
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Ko Hyun-Seok
Lee Ki-Chan
Moon Seung-Hwan
Park Yun-Jae
Esquerra Andres Lopez
Vu David
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