Temperature sensor

Details Temperature sensor Temperature sensor

1983-03-07

1990-05-08

Larkins, William D.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

357 3, 357 28, 374185, H01L 4702, G01K 722

Patent

active

049241141

ABSTRACT:
A temperature sensor having a semiconductor body is disclosed. The semiconductor body includes a substrate of a compound semiconductor and an epitaxial layer of a mixed crystal in which different conduction band minima with different effective masses are energy-wise closely adjacent. A particular embodiment comprises the mixed crystal series gallium-aluminum-arsenic having the composition Ga.sub.1-x Al.sub.x As, in which the aluminum concentration is 0.2.ltoreq.x.ltoreq.0.43. The temperature sensor formed in this manner provides a simplified design and a wide linear temperature range. Additionally, the temperature range is extended without the need for a shunt resistance.

REFERENCES:
patent: 3696262 (1972-10-01), Antypas
patent: 3852794 (1974-12-01), Pearson et al.
patent: 3994755 (1976-12-01), Kamath et al.
patent: 4096511 (1978-06-01), Gurnell et al.
patent: 4163987 (1979-08-01), Kamath et al.
patent: 4165471 (1979-08-01), Ahrenkeil
patent: 4531217 (1985-07-01), Kitamura
"Electron Transport and Band Structure of Ga.sub.1-x Al.sub.x As Alloys", H. J. Lee et al., Physical Review B, vol. 21, No. 2, Jan. 15, 1980, pp. 659-669.

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