Temperature sensor

Details Temperature sensor Temperature sensor

1992-12-30

1995-08-29

Lateef, Marvin M.

Electrical resistors

Resistance value responsive to a condition

Ambient temperature

338307, 338308, 437 60, 437225, 437918, 20419221, H01C 304

Patent

active

054464374

ABSTRACT:
An improved temperature sensor is designed for the sensitive detection of temperature changes. The temperature sensor includes a frame 9 of monocrystalline silicon and a dielectric diaphragm 13 stretched on it. A monocrystalline silicon structure 35 is disposed on or under the dielectric diaphragm which is used for measuring the temperature. In the course of this, the Seebeck effect, as well as the temperature dependence of the electrical resistance, can be used for detection of any temperature changes.

REFERENCES:
patent: 4174512 (1979-11-01), Blatter
patent: 4677850 (1987-07-01), Miura et al.
patent: 4744246 (1988-05-01), Busta
patent: 4870745 (1989-10-01), Lee
patent: 4914742 (1990-04-01), Higashi et al.
patent: 4934190 (1990-06-01), Lee
patent: 5100829 (1992-03-01), Fay et al.
B. Diem+, "SIMOX," Sensors & Actuators A21-A23 (1990) 1003-1006. Patent Abstracts of Japan, vol. 10, No. 300 [P-506], 14 Oct. 1986 summarizing Japanese publications 61-116 631(A) of 4 Jun. 1986, Takatsu/Nok Corp., Thin Film Thermistor & Manuf. Thereof.

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