Temperature sensing device, semiconductor device having temperat

Miscellaneous active electrical nonlinear devices – circuits – and – External effect – Temperature

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327513, 327 87, 374178, H01L 3500

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active

059146290

ABSTRACT:
In view of the fact as found in the prior art that a measured device as hardly installed on a chip and a temperature variation in the measured device could not be detected accurately, the present invention provides a system in which a MOS transistor is arranged, there is provided a potential control circuit for sensing a potential in the case of depletion under a gate of a certain specified MOS transistor and controlling a gate voltage of the MOS transistor while comparing the detected output with the reference voltage Vref, and a temperature is detected in reference to a variation in current of the MOS transistor while controlling a gate voltage of the MOS transistor by this potential control circuit.

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N. Manaresi et al.; "Mosfet Threshold Extraction Circuit" Electronics Letters, vol. 31, No. 17, Aug. 17, 1995 pp. 1434-1435.

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