Temperature sensing device for use in a power transistor

Details Temperature sensing device for use in a power transistor Temperature sensing device for use in a power transistor

1991-05-29

1993-08-17

DeBoer, Todd E.

Electricity: electrical systems and devices

Safety and protection of systems and devices

Circuit interruption by thermal sensing

323907, 257467, H02H 504

Patent

active

052374815

ABSTRACT:
A semiconductor diode array monolithically integrated onto a power MOS transistor or power IGBT for temperature sensing. With the application of a positive bias and a constant current, the diode array provides a voltage that varies linearly as a function of temperature for the power transistor. The diode array is constructed in such a manner so as to prevent latch-up (i.e. where a parasitic silicon controlled rectifier is turned on, locking the power transistor in an on condition) and voltage breakdown (i.e. where the diode malfunctions from excessive voltage). The diode array includes at least three diodes that are either in parallel or are in series. The two types of diode array can be used in either a high-side driver circuit or a low-side driver circuit.

REFERENCES:
patent: 4446419 (1984-05-01), Plassche et al.
patent: 4682195 (1987-07-01), Yilmaz
patent: 4881120 (1989-11-01), Nakagawa et al.
patent: 5063342 (1991-11-01), Hughes et al.
S. Soclof, "Applications of Analog Integrated Circuits," Prentice Hall (1985) pp. 273-284.

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