Temperature sensing circuit

Electrical transmission or interconnection systems – Personnel safety or limit control features – Interlock

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Details

307350, 307355, 307356, 307358, 307491, G06G 710, H03K 522

Patent

active

053369432

ABSTRACT:
A temperature sensing circuit has a first insulated gate field effect device which is operated deep into its subthreshold region where the voltage across the device varies with temperature and has a second insulated gate field effect device which is operated in an area of its square law region where the voltage across the second insulated gate field effect device is substantially independent of temperature. A comparator compares the voltages across the first and second field effect devices and provides a signal OT indicating the temperature sensed by the first insulated gate field effect device.

REFERENCES:
patent: 4201947 (1980-05-01), Schado, Jr.
"Integrated MOS temperature sensor" by R. C. Jaeger and D. V. Kerns published in the Conference Proceedings of the 1980 IEEE Region 3 Conference and Exhibit Apr. 13, 14, 15, 16, 1980 Nashville Tenn.

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