Temperature protected power transistor circuit

Details Temperature protected power transistor circuit Temperature protected power transistor circuit

1994-05-25

1996-08-06

Gaffin, Jeffrey A.

Electricity: electrical systems and devices

Safety and protection of systems and devices

Circuit interruption by thermal sensing

361 88, H02H 504

Patent

active

055439985

ABSTRACT:
A temperature protected power transistor circuit for preventing thermal breakdown of a power transistor is disclosed. The temperature protected power transistor circuit has a silicon power transistor of which the base area and emitter area are formed in a double diffusion process, and a temperature detection transistor having a specific area and formed in the same silicon chip as the silicon power transistor with the base-emitter area of the temperature detection transistor 3 electrically insulated from the silicon power transistor. The base terminal and emitter terminal of the temperature detection transistor are connected to a discrete IC 12. A base-emitter voltage detector detecting that the base-emitter voltage has reached a predetermined voltage, and a bias resistor for adjusting the base-emitter voltage offset are also provided.

REFERENCES:
patent: 4157513 (1979-06-01), Ghiringhelli et al.
patent: 4553048 (1985-11-01), Bynum et al.
patent: 5355123 (1994-10-01), Nishiura et al.
An English language abstract of Japanese Patent Laid-open Unexamined Publication No. 5-235654. Sep. 1993.
"Technical Information, Class H+ Power Amplifiers", Technics, distributed in Osaka, Japan on Mar. 9, 1994.

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