Temperature monitoring of semiconductors

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

73342, 73362SC, 307202R, 317 27R, 323 68, 323 69, 340228R, H02H 504, H02H 714

Patent

active

040016498

ABSTRACT:
A current sensor provides a voltage signal which is proportional to the average current flowing through a semiconductor device junction. This voltage signal is applied to a first analogue circuit which produces an output voltage indicative of the average power dissipated at the junction. The output of the first analogue circuit is applied to a second analogue circuit which outputs a voltage signal indicative of the temperature difference between the junction and a heat sink associated with the semiconductor device and to a third analogue circuit which outputs a voltage signal indicative of the temperature difference between the heat sink and ambient. The ambient temperature is sensed by an ambient temperature sensor which outputs a voltage signal indicative of the ambient temperature. A voltage summing circuit sums the output voltages from the second and third analogue circuits and from the ambient temperature sensor, and produces an output voltage indicative of the junction temperature.

REFERENCES:
patent: 3564293 (1971-02-01), Mungenast
patent: 3622849 (1971-11-01), Kelly, Jr. et al.
patent: 3868554 (1975-02-01), Konrad
patent: 3961173 (1976-06-01), Perry et al.

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