Temperature monitoring circuit with thermal hysteresis

Details Temperature monitoring circuit with thermal hysteresis Temperature monitoring circuit with thermal hysteresis

1998-11-17

1999-12-14

Han, Y. J.

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

323907, G05F 320

Patent

active

060022442

ABSTRACT:
A temperature monitoring circuit with thermal hysteresis in CMOS circuitry utilizes bipolar transistors which are parasitic to standard CMOS circuitry. A concept of band-gap circuitry is used to provide a proportional to absolute temperature (PTAT) current, which is used as a reference. An output signal is produced above a predetermined temperature by comparing current changes between the PTAT current and a PTAT controlled current in a single current path. The PTAT controlled current decreases faster with temperature increase than the change in the PTAT current. The thermal hysteresis is accomplished by inverting the output signal to control a hysteresis transistor for selectively shorting out a hysteresis resistor. In the preferred embodiment, a start circuit is attached to the temperature monitoring circuit with thermal hysteresis to provide an initial current to activate the present invention. The start circuit is quickly shorted out once the devices of the present invention are turned on.

REFERENCES:
patent: 4450367 (1984-05-01), Whatley
patent: 4789819 (1988-12-01), Nelson
patent: 4887181 (1989-12-01), Lenz
patent: 4954769 (1990-09-01), Kalthoff
patent: 5132556 (1992-07-01), Cheng
patent: 5543632 (1996-08-01), Ashley

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