Temperature measuring method for semiconductor wafers and proces

Details Temperature measuring method for semiconductor wafers and proces Temperature measuring method for semiconductor wafers and proces

1999-01-21

2000-11-07

Bennett, G. Bradley

Thermal measuring and testing

Temperature measurement

In spaced noncontact relationship to specimen

374137, 374161, 374166, 374167, G01K 700, G01K 1132, G01J 508

Patent

active

061426636

ABSTRACT:
This invention is intended to provide a semiconductor wafer temperature measuring method for use in reflector plate-equipped infrared annealing furnaces, infrared heating epitaxy furnaces, and other semiconductor wafer processing equipment that employs lamps as the heat source, the method affording easy and accurate measurement of substrate surface temperature, thereby enabling control of the heat source on the basis of these measurements. Characterizing features are the provision of a slit or small hole to the reflector plate and measuring light from the semiconductor wafer surface in the perpendicular direction by means of a scanning CCD sensor to allow substrate temperature to be measured on the basis of the radiant light distribution peak; and the provision of slits in a plurality of locations on the reflecting plate without impairing the function thereof, so that substrate temperature distribution can be measured accurately.

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