Temperature measurement using ion implanted wafers

Details Temperature measurement using ion implanted wafers Temperature measurement using ion implanted wafers

1993-11-09

1995-07-25

Gutierrez, Diego F. F.

Thermal measuring and testing

Temperature measurement

By electrical or magnetic heat sensor

338 25, 374183, 374178, G01K 716

Patent

active

054356466

ABSTRACT:
The value of an unknown test temperature is measured by heating a test wafer (58) to the unknown temperature, measuring the surface electrical resistivity of the test wafer (58), and determining the value of the unknown temperature from the measured surface electrical resistivity. The test wafer (58) is prepared by providing an initial wafer (50), first ion implanting the initial wafer (50) with a first dose of an ionic species, and annealing the ion implanted initial wafer (50) at an annealing temperature. The preparation is completed by second ion implanting the annealed wafer with a second dose of the same ionic species as used in the first dose to form a test wafer, the second dose being lower than the first dose.

REFERENCES:
patent: 4640629 (1987-02-01), Antonini et al.
patent: 4739258 (1988-04-01), Schwarz
patent: 4764026 (1988-08-01), Powell et al.
patent: 4984902 (1991-01-01), Crowley et al.
patent: 5114242 (1992-05-01), Gat et al.
patent: 5141334 (1992-08-01), Castles

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