Temperature measurement in a processing chamber using in-situ mo

Details Temperature measurement in a processing chamber using in-situ mo Temperature measurement in a processing chamber using in-situ mo

1991-05-22

1993-05-25

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

156601, 156626, 374131, 374161, H01L 2166, C30B 700

Patent

active

052139859

ABSTRACT:
A relatively simple optical monitoring technique is utilized to measure temperature within a processing chamber. A III-V direct-bandgap semiconductor is optically excited to emit photoluminescence (PL). Spectral resolution of the emitted PL provides a direct measure of the bandgap of the semiconductor. In turn, the temperature of the semiconductor is derived from the bandgap measurement.

REFERENCES:
patent: 4819658 (1989-04-01), Kolodner
patent: 4890933 (1990-01-01), Amith et al.
patent: 5118200 (1992-01-01), Kirillov et al.
"Temperature Dependence of the Energy Gap in Semiconductors", Y. P. Varshni, Physica 34, pp. 149-154, 1967.
"Temperature Dependence of the Energy Gap in GaAs and GaP", M. B. Panish et al., J. Appl. Phys., vol. 40, No. 1, pp. 163-167, Jan. 1969.
"The Standard Thermodynamic Functions for the Formation of Electrons and Holes in Ge, Si, GaAs, and GaP", C. D. Thurmond, J. Electrochem. Soc., vol. 122, No. 8, pp. 1133-1141, Aug. 1975.

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